场效应管 BSM100GB120DN2的资料参数

BSM100GB120DN2

封装 :

品牌 : Siemens Semiconductor Group

脚位 :

功能描述 :
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)

温度 : Min °C | Max °C

BSM100GB120DN2 PDF