场效应管 HGT1S3N60C3D的资料参数

HGT1S3N60C3D

封装 :

品牌 : HARRIS[Harris Corporation]

脚位 :

功能描述 :
600V, Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

温度 : Min °C | Max °C

HGT1S3N60C3D PDF