IGBT
IGBT(Insulated-Gate Bipolar Transistor)是一种用于电力控制的器件。它和类双极主导电沟道的MOSFET的结构类似。它们一般用于漏源电压范围在200-3000伏的运行。功率MOSFET仍然被选择为漏源电压在1到200伏时的器件.
IGBT型号列表
C67070-A2701-A67
(IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) )
Siemens Semiconductor Group
(IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) )
Siemens Semiconductor Group
HGT4E20N60A4DS
(600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode )
Fairchild Semiconductor
(600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode )
Fairchild Semiconductor
HGTG20N60B3D
(600V, Series N-Channel IGBT with Anti-Parallel Hyperfast Diode )
Fairchild Semiconductor
(600V, Series N-Channel IGBT with Anti-Parallel Hyperfast Diode )
Fairchild Semiconductor
SKW20N60
(Fast IGBT NPT-technology with soft, fast recovery anti-parallel EmCon diode )
Infineon Technologies
(Fast IGBT NPT-technology with soft, fast recovery anti-parallel EmCon diode )
Infineon Technologies
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