绝缘栅场效应管
用一个绝缘体（通常是二氧化硅）于栅和体之间。绝缘栅场效应管有两种结构形式，它们是N沟道型和P沟道型。无论是什么沟道，它们又分为增强型和耗尽型两种。绝缘栅场效应管具有更高的输入电阻，制造工艺简单，适于集成电路。增强型MOS管在栅-源极电压
绝缘栅场效应管型号列表
SI9948AEY
(Dual P-Channel 60-V 175C MOSFET )
Vishay Siliconix
IRF7807D1
(MOSFET SCHOTTKY DIODE )
International Rectifier
IRF7807V
(Channel Application Specific MOSFET )
International Rectifier
IRF7807VD1
(FETKY MOSFET SCHOTTKY DIODE )
International Rectifier
SI4835DY
(P-Channel Logic Level PowerTrench MOSFET )
Fairchild Semiconductor
UCC27321
(SINGLE HIGH SPEED SIDE MOSFET DRIVER WITH ENABLE )
Texas Instruments
UCC27323
(DUAL PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS )
Texas Instruments
STB75NF75
(N-CHANNEL 0.0095 TO-220/TO-220FP/DPAK STripFET POWER MOSFET )
STMicroelectronics
STB75NF75L
(N-CHANNEL 0.009 D2PAK/I2PAK/TO-220 STripFET POWER MOSFET )
STMicroelectronics
71061
(P-Channel 30-V MOSFET with Schottky Diode )
Vishay Siliconix
IRF7106
(Power MOSFET(Vdss=+-20V) )
International Rectifier
STW8NB100
(N-CHANNEL 1000V 7.3A TO-247 POWERMESH MOSFET )
Microelectronics
FS7KM-16
(POWER MOSFET HIGH-SPEED SWITCHING )
Powerex Power Semiconductors
IRF840A
(Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) )
International Rectifier
IRF840B
(500V N-Channel MOSFET )
Fairchild Semiconductor