场效应管网

专业场效应管资料网站

HEMT

HEMT(高电子迁移率晶体管,High Electron Mobility Transistor),也被称为HFET(异质结场效应晶体管,heterostructure FET),是运用带隙工程在三重半导体例如AlGaAs中制造的。完全耗尽宽带隙造成了栅极和体之间的绝缘。

HEMT型号列表

ATF-36077
(2-18 Ultra Noise Pseudomorphic HEMT )
Agilent(Hewlett-Packard)
ATF-36163
(1.5-18 Surface Mount Pseudomorphic HEMT )
Agilent(Hewlett-Packard)
MGF4951
(SUPER NOISE InGaAs HEMT )
Mitsubishi Electric Semiconductor
ATF501P8
(Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT LPCC Package )
HP[Agilent(Hewlett-Packard)]
ATF55143
(Agilent ATF-55143 Noise Enhancement Mode Pseudomorphic HEMT Surface Mount Plastic Package )
HP[Agilent(Hewlett-Packard)]
ATF54143
(Noise Enhancement Mode Pseudomorphic HEMT Surface Mount Plastic Package )
AGILENT
ATF-38143-
(Noise Pseudomorphic HEMT Surface Mount Plastic Package )
HP[Agilent(Hewlett-Packard)]
ATF-35143-BLK
(TRANSISTOR,HEMT,N-CHAN,5.5V V(BR)DSS,40MA I(DSS),SOT-343R )
Agilent Technologies
ATF-331M4-
(Agilent ATF-331M4 Noise Pseudomorphic HEMT Miniature Leadless Package )
HP[Agilent(Hewlett-Packard)]
ATF-52189-BLK
(Enhancement Mode Pseudomorphic HEMT Package )
Agilent(Hewlett-Packard)

1 2 3 4