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IGBT

IGBT（Insulated-Gate Bipolar Transistor）是一种用于电力控制的器件。它和类双极主导电沟道的MOSFET的结构类似。它们一般用于漏源电压范围在200-3000伏的运行。功率MOSFET仍然被选择为漏源电压在1到200伏时的器件.

IGBT型号列表

CPV364M4K
(IGBT MODULE )
International Rectifier
TA8316AS
(IGBT GATE DRIVER )
Toshiba Semiconductor
SGW25N120
(Fast IGBT NPT-technology )
Infineon Technologies
C67070-A2701-A67
(IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) )
Siemens Semiconductor Group
TLP250
(TRANSISTOR INVERTER CONDITIONOR IGBT GATE DRIVE POWER GATE DRIVE )
Toshiba Semiconductor
GA100TS120U
(HALF-BRIDGE IGBT INT-A-PAK )
International Rectifier
GA75TS120U
(Ultra-FastTM Speed IGBT )
International Rectifier
HGT1S20N60C3S
(600V, Series N-Channel IGBT )
Fairchild Semiconductor
HGT4E20N60A4DS
(600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode )
Fairchild Semiconductor
HGTG20N60B3D
(600V, Series N-Channel IGBT with Anti-Parallel Hyperfast Diode )
Fairchild Semiconductor
SGH20N60RUF
(Short Circuit Rated IGBT )
Fairchild Semiconductor
SGP20N60HS
(High Speed IGBT NPT-technology )
Infineon Technologies
SKW20N60
(Fast IGBT NPT-technology with soft, fast recovery anti-parallel EmCon diode )
Infineon Technologies
MC33153
(SINGLE IGBT GATE DRIVER )
Semiconductor
MC33154D
(SINGLE IGBT HIGH CURRENT GATE DRIVER )
Motorola,

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